inchange semiconductor product specification silicon npn power transistors 2sc2275 2SC2275A description ? with to-220 package ? complement to type 2sa985/985a ? high breakdown voltage applications ? for low frequency and high frequency power amplifer applicatons pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2sc2275 120 v cbo collector-base voltage 2SC2275A open emitter 150 v 2sc2275 120 v ceo collector-emitter voltage 2SC2275A open base 150 v v ebo emitter-base voltage open collector 5 v i c collector current 1.5 a i cm collector current-peak 3.0 a i b base current 0.3 a p c collector power dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2sc2275 2SC2275A characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2sc2275 120 v (br)ceo collector-emitter breakdown voltage 2SC2275A i c =25ma ,i b =0 150 v v cesat collector-emitter saturation voltage i c =1a; i b =0.1a 2.0 v v besat base-emitter saturation voltage i c =1a; i b =0.1a 1.5 v i cbo collector cut-off current v cb =120v; i e =0 1.0 | a i ebo emitter cut-off current v eb =3v; i c =0 1.0 | a h fe-1 dc current gain i c =5ma ; v ce =5v 35 h fe-2 dc current gain i c =0.3a ; v ce =5v 60 150 320 c ob output capacitance i e =0 ; v cb =10v,f=1mhz 19 pf f t transition frequency i c =0.2a ; v ce =5v 200 mhz ? h fe-2 classifications r q p 60-120 100-200 160-320
inchange semiconductor product specification 3 silicon npn power transistors 2sc2275 2SC2275A package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm)
|
